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APTC80AM75SC
Phase leg Series & SiC parallel diodes Super Junction MOSFET Power Module VDSS = 800V RDSon = 75mW max @ Tj = 25C ID = 56A @ Tc = 25C
Application * Motor control * Switched Mode Power Supplies * Uninterruptible Power Supplies Features * * Ultra low RDSon Low Miller capacitance Ultra low gate charge Avalanche energy rated
Parallel SiC Schottky Diode - Zero reverse recovery - Zero forward recovery - Temperature Independent switching behavior - Positive temperature coefficient on VF Kelvin source for easy drive Very low stray inductance - Symmetrical design - M5 power connectors High level of integration
* *
G1 S1 VBUS 0/VBUS OUT
*
S2 G2
Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Low profile
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C Max ratings 800 56 43 232 30 75 568 24 0.5 670 Unit V A V mW W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
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APTC80AM75SC - Rev 1 May, 2004
APTC80AM75SC
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol Characteristic BVDSS Drain - Source Breakdown Voltage IDSS RDS(on) VGS(th) IGSS Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 1000A VGS = 0V,VDS = 800V Tj = 25C VGS = 0V,VDS = 800V Tj = 125C VGS = 10V, ID = 28A VGS = VDS, ID = 4mA VGS = 20 V, VDS = 0V Min 800 Typ Max 100 1000 75 3.9 200 Unit V A mW V nA
2.1
3
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy u Turn-on Switching Energy Turn-off Switching Energy u Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 400V ID = 56A Inductive switching @ 125C VGS = 15V VBus = 553V ID = 56A RG = 1.2 Inductive switching @ 25C VGS = 15V, VBus = 533V ID = 56A, RG = 1.2 Inductive switching @ 125C VGS = 15V, VBus = 533V ID = 56A, RG = 1.2 Min Typ 9015 4183 215 364 48 184 10 13 83 35 583 556 1020 684 J J Max Unit pF
nC
ns
Series diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF Diode Forward Voltage Test Conditions 50% duty cycle IF = 60A IF = 120A IF = 60A IF = 60A VR = 133V di/dt = 400A/s IF = 60A VR = 133V di/dt = 400A/s Min Tc = 85C Typ 60 1.1 1.4 0.9 24 48 66 300 Max 1.15 V Unit A
Tj = 125C Tj = 25C Tj = 125C Tj = 25C Tj = 125C
Qrr
Reverse Recovery Charge
nC
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APTC80AM75SC - Rev 1 May, 2004
trr
Reverse Recovery Time
ns
APTC80AM75SC
Parallel diode ratings and characteristics
Symbol Characteristic Maximum Average Forward Current IF(AV) VF QC Q Diode Forward Voltage Total Capacitive Charge Total Capacitance Test Conditions
50% duty cycle
Min Tc = 125C Tj = 25C Tj = 175C
IF = 30A
Typ 30 1.6 2.6 84 270 198
Max 1.8 3.0
Unit A V nC pF
IF = 30A, VR = 600V di/dt =1600A/s f = 1MHz, VR = 200V f = 1MHz, VR = 400V Min Transistor Series diode Parallel diode 2500 -40 -40 -40 3 2
Thermal and package characteristics
Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case Typ Max 0.22 0.65 0.45 150 125 100 5 3.5 280 Unit C/W V C N.m g
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink For terminals M6 M5
Package outline
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APTC80AM75SC - Rev 1 May, 2004
APTC80AM75SC
Typical CoolMOS Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.25 Thermal Impedance (C/W) 0.2 0.15 0.1 0.3 0.05 0 0.00001 0.1 0.05 0.0001 Single Pulse 0.9 0.7 0.5
0.001
0.01
0.1
1
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 160 140 ID, Drain Current (A) 120 100 80 60 40 20 0 0 5 10 15 20 25 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current 1.4 1.3 1.2 1.1 1 0.9 0.8 0 20 40 60 80 100 ID, Drain Current (A) 120
VGS=20V
Transfert Characteristics 200
VDS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
VGS=15&10V
ID, Drain Current (A)
6.5V 6V 5.5V 5V 4.5V 4V
150
100
50
T J=25C T J=125C T J=-55C
0 0 1 2 3 4 5 6 7 8 VGS, Gate to Source Voltage (V)
RDS(on) Drain to Source ON Resistance
DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A)
Normalized to VGS=10V @ 28A
VGS=10V
50 40 30 20 10 0 25 50 75 100 125 150
APTC80AM75SC - Rev 1 May, 2004
TC, Case Temperature (C)
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APTC80AM75SC
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.15 1.10 1.05 1.00 0.95 0.90 -50 0 50 100 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) ID, Drain Current (A) 1.1 1.0 0.9 0.8 0.7 -50 0 50 100 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss Crss 100 1000
limited by RDSon
ON resistance vs Temperature 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 0 50 100 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 28A
100
100s
10
1ms 10ms
1
Single pulse TJ=150C 1
100ms
0 10 100 1000 VDS, Drain to Source Voltage (V)
VGS, Gate to Source Voltage (V)
Gate Charge vs Gate to Source Voltage 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 Gate Charge (nC)
APTC80AM75SC - Rev 1 May, 2004
VDS=640V ID=56A TJ=25C VDS=160V VDS=400V
10000
1000
10 0 10 20 30 40 50 VDS, Drain to Source Voltage (V)
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APTC80AM75SC
Delay Times vs Current Rise and Fall times vs Current 50 td(off) td(on) and td(off) (ns) 40 tr and tf (ns)
VDS=533V RG=1.2 TJ=125C L=100H
100 80 60 40 20 0 20 30 40 50 60 70 ID, Drain Current (A) 80 90
tf 30 20 tr 10 0 20 30
VDS=533V RG=1.2 TJ=125C L=100H
td(on)
40 50 60 70 ID, Drain Current (A)
80
90
Switching Energy vs Current 2 1.6 1.2 0.8 0.4 0 20 30 40 50 60 70 ID, Drain Current (A) 80 90 Eoff
VDS=533V RG=1.2 TJ=125C L=100H
Switching Energy vs Gate Resistance 3.5
VDS=533V ID=56A TJ=125C L=100H
Eon and Eoff (mJ)
Eon
Switching Energy (mJ)
3 2.5 2 1.5 1 0.5 0
Eoff
Eon
2.5 5 7.5 Gate Resistance (Ohms)
10
Operating Frequency vs Drain Current 350 Frequency (kHz) 300 250 200 150 100 50 0 10 15 20 25 30 35 40 ID, Drain Current (A) 45 50
VDS=533V D=50% RG=1.2 TJ=125C
IDR, Reverse Drain Current (A)
400
Source to Drain Diode Forward Voltage 1000
TJ=150C 100
10
TJ=25C
1 0.2 0.6 1 1.4 1.8
VSD, Source to Drain Voltage (V)
APTC80AM75SC - Rev 1 May, 2004
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APTC80AM75SC
Typical SiC Diode Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.5 0.45 0.9 0.4 0.35 0.7 0.3 0.5 0.25 0.2 0.3 0.15 0.1 0.1 Single Pulse 0.05 0.05 0 0.00001 0.0001 0.001 0.01 0.1 Rectangular Pulse Duration (Seconds) Forward Characteristics
TJ=25C
Thermal Impedance (C/W)
1
Reverse Characteristics 1200 IR Reverse Current (A)
60
IF Forward Current (A)
50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 3.5
VF Forward Voltage (V) Capacitance vs.Reverse Voltage
TJ=125C TJ=175C TJ=75C
900
600
TJ=75C TJ=125C TJ=175C TJ=25C
300
0 400
600
800 1000 1200 1400 1600 VR Reverse Voltage (V)
2400 C, Capacitance (pF) 2000 1600 1200 800 400 0 1 10 100 VR Reverse Voltage 1000
APTC80AM75SC - Rev 1 May, 2004
"COOLMOSTM comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG". APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
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